IPI057N08N3 G
Manufacturer Product Number:

IPI057N08N3 G

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPI057N08N3 G-DG

Description:

MOSFET N-CH 80V 80A TO262-3
Detailed Description:
N-Channel 80 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3

Inventory:

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IPI057N08N3 G Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4750 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI057N

Datasheet & Documents

Datasheets
IPI057N08N3 G

Additional Information

Other Names
SP000680662
IPI057N08N3G
IPI057N08N3 G-DG
SP000395182
Standard Package
500

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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